IMZC120R026M2H Datasheet - Infineon

IMZC120R026M2H 1200V SiC MOSFET

1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technologies AG 2021. All rights reserved. Type IMZC120R026M2H Package PG-TO247-4-U07 Marking.

IMZC120R026M2H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 49 A at TC = 100°C

* RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold voltage, VGS

IMZC120R026M2H-Infineon.pdf