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IMZC120R026M2H Datasheet - Infineon

IMZC120R026M2H - 1200V SiC MOSFET

1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technologies AG 2021.

All rights reserved.

Type IMZC120R026M2H Package PG-TO247-4-U07 Marking

IMZC120R026M2H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 49 A at TC = 100°C

* RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold voltage, VGS

IMZC120R026M2H-Infineon.pdf

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Datasheet Details

Part number:

IMZC120R026M2H

Manufacturer:

Infineon ↗

File Size:

1.33 MB

Description:

1200v sic mosfet.

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