IMZC120R026M2H - 1200V SiC MOSFET
1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Technologies AG 2021.
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Type IMZC120R026M2H Package PG-TO247-4-U07 Marking
IMZC120R026M2H Features
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 49 A at TC = 100°C
* RDS(on) = 25 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage, VGS
