IMZC120R034M2H 1200V SiC MOSFET

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Description

IMZC120R034M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo.
1. drain 2. source 3. Kelvin sense contact 4. gate Note: the source and sense pins are not exchangeable, their exc.

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Datasheet Specifications

Part number: IMZC120R034M2H
Manufacturer: Infineon ↗
File Size: 1.26 MB
Datasheet: IMZC120R034M2H-Infineon.pdf
Description: 1200V SiC MOSFET

Features

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 39 A at TC = 100°C
* RDS(on) = 34 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload operation up to Tvj = 200°C
* Short circuit withstand time 2 µs
* Benchmark gate threshold voltage, VGS

Applications

* General purpose drives (GPD)
* EV Charging
* Online UPS / Industrial UPS
* String inverter
* Energy Storage Systems (ESS)
* Welding Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

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IMZC120R034M2H 1200V SiC MOSFET Infineon

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