IPB049NE7N3
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Power-transistor.
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IPB049NE7N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB049NE7N3G - Power-Transistor
(Infineon)
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IPB049N06L3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB049N06L3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB049N06L3 - Power-Transistor
(Infineon)
Jf]R
IPB049N06L3 G IPP052N06L3 G
%&$ #™3 Power-Transistor
Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J.
IPB049N06L3G - Power-Transistor
(Infineon Technologies)
Jf]R
IPB049N06L3 G IPP052N06L3 G
%&$ #™3 Power-Transistor
Features R#562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4
C64
R) AE:> :K65 E649? @=@8J.
IPB049N08N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª 5 Power-Transistor, 80 V IPB049N08N5
Data Sheet
Rev. 2.0 Final
Power Manag.
IPB049N08N5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to .
IPB040N08NF2S - MOSFET
(Infineon)
IPB040N08NF2S
MOSFET
StrongIRFETTM 2 Power-Transistor
Features
• Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.
IPB041N04N - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB041N04N - Power Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1.
