IPB052N04N
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Power-transistor.
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IPB052N04NG - Power-Transistor
(Infineon Technologies)
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IPB050N06N - Power-Transistor
(Infineon)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPB050N06NG - Power-Transistor
(Infineon Technologies)
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating t.
IPB051NE8N - Power-Transistor
(Infineon)
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPB051NE8NG - Power-Transistor
(Infineon)
IPB051NE8N G IPI05CNE8N G IPP054NE8N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM).
IPB054N06N3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB054N06N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB054N06N3 - Power-Transistor
(Infineon)
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IPB054N06N3 G IPP057N06N3 G
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>?
IPB054N06N3G - Power-Transistor
(Infineon)
Ie\Q
IPB054N06N3 G IPP057N06N3 G
%&$ #™3 Power-Transistor
Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>?
IPB054N08N3 - Power-Transistor
(Infineon)
IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G
%&$ #™3 Power-Transistor
Features Q' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H [Z# @B? 4E3 D .
IPB054N08N3G - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB054N08N3G
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.
