Datasheet4U.com

IPB26CN10N - Power-Transistor

Infineon

📥 Download Datasheet

IPB26CN10N Datasheet Preview — Preview of IPB26CN10N PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IPB26CN10N
Manufacturer	Infineon ↗
File Size	1.01 MB
Description	Power-Transistor
Datasheet	IPB26CN10N-Infineon.pdf

IPB26CN10N Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

📁 IPB26CN10N Similar Datasheet

IPB26CNE8NG - Power-Transistor (Infineon Technologies)
IPB200N15N3G - Power-Transistor (Infineon Technologies)
IPB200N25N3G - Power-Transistor (Infineon Technologies)
IPB22N03S4L-15 - Power-Transistor (Infineon Technologies)
IPB230N06L3G - Power-Transistor (Infineon Technologies)
IPB25N06S3-25 - Power-Transistor (Infineon Technologies)
IPB25N06S3L-22 - Power-Transistor (Infineon Technologies)
IPB009N03LG - MOSFET (Infineon Technologies)

Other Datasheets by Infineon

IPB26CN10NG - Power-Transistor
IPB200N15N3 - Power-Transistor
IPB200N25N3 - Power-Transistor
IPB240N03S4L-R8 - Power-Transistor
IPB240N03S4L-R9 - Power-Transistor
IPB240N04S4-1R0 - Power-Transistor

Published: Oct 2, 2020 |