Datasheet4U.com

IPB34CN10NG - Power-Transistor

Infineon

📥 Download Datasheet

IPB34CN10NG Datasheet Preview — Preview of IPB34CN10NG PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IPB34CN10NG
Manufacturer	Infineon ↗
File Size	833.54 KB
Description	Power-Transistor
Datasheet	IPB34CN10NG-Infineon.pdf

IPB34CN10NG Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

📁 IPB34CN10NG Similar Datasheet

IPB34CN10N - N-Channel MOSFET (INCHANGE)
IPB009N03LG - MOSFET (Infineon Technologies)
IPB011N04LG - Power Transistor (Infineon Technologies)
IPB011N04NG - OptiMOS3 Power Transistor (Infineon Technologies)
IPB014N06N - Power Transistor (Infineon Technologies)
IPB015N04L - N-Channel MOSFET (INCHANGE)
IPB015N04LG - Power Transistor (Infineon Technologies)
IPB015N04N - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPB320N20N3 - Power-Transistor
IPB320N20N3G - Power-Transistor
IPB35CN10NG - Power-Transistor
IPB35N10S3L-26 - MOSFET
IPB009N03L - MOSFET
IPB010N06N - MOSFET

Published: Feb 13, 2016 |