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IPC042N03L3 - MOSFET

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IPC042N03L3 Product details

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPD040N03LG AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlCu system Power MOS Transistor Chip Table 1 Key Performance Parameters Parameter Value Unit V(BR)DSS RDS(on

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