IPC045N10N3

MOSFET

Infineon

IPC045N10N3 General Description

* N-channel enhancement mode

* For dynamic characterization refer to the datasheet of IPP180N10N3 G

* AQL 0.65 for visual inspection according to failure catalogue

* Electrostatic Discharge Sensitive Device according to JEDEC

* Die bond: soldered or glued
.

IPC045N10N3 Datasheet (558.66 KB)

IPC045N10N3 Datasheet Preview — Preview of IPC045N10N3 PDF

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IPC045N10N3

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Infineon ↗

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558.66 KB

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Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor Bare Die OptiMOS™3 Power MOS Transistor Chip IPC045N10N3 Data Sheet Rev. 2.5 Final Industrial.

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IPC045N10N3 General Description

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