Datasheet Details
| Part number | IPC045N10N3 |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 558.66 KB |
| Description | MOSFET |
| Datasheet |
 IPC045N10N3-Infineon.pdf
|
| Part number | IPC045N10N3 |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 558.66 KB |
| Description | MOSFET |
| Datasheet |
IPC045N10N3-Infineon.pdf
|
N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP180N10N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to JEDEC Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlCu system Passivation: nitride (only on edge structure) Power MOS Transistor Chip Table 1 Key Performance
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