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IPC300N15N3R - MOSFET

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IPC300N15N3R Product details

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP075N15N3 G1) AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlCu system Passivation: nitride (only on edge structure) Power MOS Transistor Chip Table 1 Key Pe

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