Datasheet Details
- Part number
- IPC302N10N3
- Manufacturer
- Infineon ↗
- File Size
- 532.77 KB
- Datasheet
-
IPC302N10N3-Infineon.pdf
- Description
- MOSFET
IPC302N10N3-Infineon.pdf
N-channel enhancement mode For dynamic characterization refer to the datasheet of IPB027N10N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlCu system Passivation: nitride (only on edge structure) Power MOS Transistor Chip Table 1 Key Perfo
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