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IPC302NE7N3 - MOSFET

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IPC302NE7N3 Product details

Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP023NE7N3 G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlCu system Passivation: nitride (only on edge structure) Package: sawn on foil Power MOS Transi

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