IPD60R600P7S Datasheet - Infineon

IPD60R600P7S Power-Transistor

IPD60R600P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation an.

IPD60R600P7S Features

* Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness

* Significant reduction of switching and conduction losses

* Excellent ESD robustness >2kV (HBM) for all products

* Better RDS(on)/package products compared to competit

IPD60R600P7S Datasheet (914.17 KB)