IPF019N12NM6 MOSFET

Infineon

Description

IPF019N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .

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Datasheet Specifications

Part number: IPF019N12NM6
Manufacturer: Infineon ↗
File Size: 1.00 MB
Datasheet: IPF019N12NM6-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 1.9 mΩ ID 254 A Qoss 267 nC QG 113 nC Qrr (1000 A/µs) 336 nC Type / Ordering Code IPF019N12NM6 Package PG-TO263-7 D²-PAK 7pin tab 1 7 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Markin

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IPF019N12NM6 MOSFET Infineon

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