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IPF067N20NM6 MOSFET

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Description

IPF067N20NM6 MOSFET OptiMOSTM 6 Power-Transistor, 200 V .

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Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Pb-free lead plating; RoHS compli

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 200 V RDS(on),max 6.7 mΩ ID 138 A Qoss 227 nC QG 72 nC Qrr (1000A/µs) 364 nC Type / Ordering Code IPF067N20NM6 Package PG-TO263-7 D²-PAK 7pin tab 1 7 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Marking

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