IPP50R199CP Datasheet, Transistor, Infineon

IPP50R199CP Features

• Transistor
• Lowest figure-of -merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS comp

PDF File Details

Part number:

IPP50R199CP

Manufacturer:

Infineon ↗

File Size:

274.56kb

Download:

📄 Datasheet

Description:

Power transistor.

IPP50R199CP Application

• Applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R199CP 550 V 0.199 Ω 34 nC PG-TO220 CoolMOS CP is designed for:
• Har

TAGS

IPP50R199CP

Infineon

📁 Related Datasheet

IPP50R199CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R199CP，IIPP50R199CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switc.

IPP50R190CE - MOSFET (Infineon)
IPW50R190CE, IPP50R190CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPP50R190CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R190CE，IIPP50R190CE ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.

IPP50R140CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated.

IPP50R140CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R140CP，IIPP50R140CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.14Ω ·Enhancement mode ·Fast Switch.

IPP50R250CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.

IPP50R250CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R250CP，IIPP50R250CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.25Ω ·Enhancement mode ·Fast Switch.

IPP50R280CE - MOSFET (Infineon)
IPW50R280CE, IPP50R280CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPP50R280CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R280CE，IIPP50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch.

IPP50R299CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.