IPP530N15N3
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Power transistor.
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IPP530N15N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP530N15N3,IIPP530N15N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤53mΩ ·Enhancement mode ·Fast Switchin.
IPP530N15N3G - Power Transistor
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IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G
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IPP50CN10NG - Power Transistor
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5: 3 @@7> @A D?3 >>7H7> S J57>>7@F93 F7 5: 3 D97 J'
IPP50N10S3L-16 - Power Transistor
(Infineon)
IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16
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Product Summary V DS R DS(on),max (SMD version) ID 100 15.4 50 PG-TO262-3-.
IPP50R140CP - Power Transistor
(Infineon)
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Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated.
IPP50R140CP - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IPP50R140CP,IIPP50R140CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.14Ω ·Enhancement mode ·Fast Switch.
IPP50R190CE - MOSFET
(Infineon)
IPW50R190CE, IPP50R190CE
MOSFET
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CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
IPP50R190CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP50R190CE,IIPP50R190CE
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.
IPP50R199CP - Power Transistor
(Infineon)
CoolMOSTM Power Transistor
Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • .
IPP50R199CP - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
IPP50R199CP,IIPP50R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switc.