IPP50R250CP Datasheet, Mosfet, INCHANGE

IPP50R250CP Features

• Mosfet
• Static drain-source on-resistance: RDS(on) ≤0.25Ω
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations

PDF File Details

Part number:

IPP50R250CP

Manufacturer:

INCHANGE

File Size:

240.76kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

IPP50R250CP Application

• Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

IPP50R250CP

INCHANGE

📁 Related Datasheet

IPP50R250CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.

IPP50R280CE - MOSFET (Infineon)
IPW50R280CE, IPP50R280CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPP50R280CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R280CE，IIPP50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch.

IPP50R299CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • P.

IPP50R299CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R299CP，IIPP50R299CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.299Ω ·Enhancement mode ·Fast Switc.

IPP50R140CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Worldwide best R DS ,on in TO220 • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated.

IPP50R140CP - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R140CP，IIPP50R140CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.14Ω ·Enhancement mode ·Fast Switch.

IPP50R190CE - MOSFET (Infineon)
IPW50R190CE, IPP50R190CE MOSFET 500V CoolMOSª CE Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.

IPP50R190CE - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP50R190CE，IIPP50R190CE ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.

IPP50R199CP - Power Transistor (Infineon)
CoolMOSTM Power Transistor Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • .