* Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
* Significant reduction of switching and conduction losses
* Excellent ESD robustness >2kV (HBM) for all products
* Better RDS(on)/package products compared to competit
IPP60R280P7 Datasheet (1.59 MB)
IPP60R280P7
1.59 MB
Mosfet.
IPP60R280P7
MOSFET
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.
📁 Related Datasheet
IPP60R280P6 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R280P6
Data Sheet
Rev. 2.2 Final
Power Man.
IPP60R280P6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R280P6，IIPP60R280P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch.
IPP60R280P7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R280P7，IIPP60R280P7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch.
IPP60R280C6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 600V
600V CoolMOS™ C6 Power Transistor IPx60R280C6
Data Sheet
Rev. 2.3 Final
Powe.
IPP60R280C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R280C6，IIPP60R280C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switch.
IPP60R280CFD7 - MOSFET
(Infineon)
IPP60R280CFD7
MOSFET
600V CoolMOSª CFD7 Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to.
IPP60R280CFD7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Swi.
IPP60R280E6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6 600V
600V CoolMOS™ E6 Power Transistor IPx60R280E6
Data Sheet
Rev. 2.2 Final
Powe.
