* Increased MOSFET dv/dt ruggedness
* Extremely low losses due to very low FOM Rdson
* Qg and Eoss
* Very high commutation ruggedness
* Easy to use/drive
* Pb-free plating, Halogen free mold compound
* Qualified for industrial grade applications acco
IPP60R330P6 Datasheet (2.55 MB)
IPP60R330P6
2.55 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ P6
600V CoolMOS™ P6 Power Transistor IPx60R330P6
Data Sheet
Rev. 2.2 Final
Power Man.
📁 Related Datasheet
IPP60R330P6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R330P6，IIPP60R330P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.33Ω ·Enhancement mode ·Fast Switch.
IPP60R360P7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP60R360P7，IIPP60R360P7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.36Ω ·Enhanc.
IPP60R360P7 - MOSFET
(Infineon)
IPP60R360P7
MOSFET
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.
IPP60R380C6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C6 600V
600V CoolMOS™ C6 Power Transistor IPx60R380C6
Data Sheet
Rev. 2.4 Final
Powe.
IPP60R380C6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R380C6，IIPP60R380C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switch.
IPP60R380E6 - MOSFET
(Infineon Technologies)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6 600V
600V CoolMOS™ E6 Power Transistor IPx60R380E6
Data Sheet
Rev. 2.6 Final
Powe.
IPP60R380P6 - MOSFET
(Infineon)
IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6
MOSFET
600V CoolMOSª P6 Power Transistor
CoolMOS™ is a revolutionary technology for high voltage .
IPP60R380P6 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R380P6，IIPP60R380P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switch.
