IPS65R1K4C6
1.01MB
Mosfet. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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📁 Related Datasheet
IPS65R1K0CE - MOSFET
(Infineon Technologies)
IPS65R1K0CE
MOSFET
650V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
IPS65R1K5CE - MOSFET
(Infineon Technologies)
IPS65R1K5CE
MOSFET
650V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
IPS65R400CE - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v.
IPS65R400CE - MOSFET
(Infineon)
IPD65R400CE, IPS65R400CE
MOSFET
650V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed acc.
IPS65R600E6 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ E6
650V CoolMOS™ E6 Power Transistor lPS65R600E6
Data Sheet
Rev. 2.0 Final
Power Man.
IPS65R650CE - MOSFET
(Infineon)
IPS65R650CE
MOSFET
650V CoolMOSª CE Power Transistor
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the.
IPS65R950C6 - MOSFET
(Infineon)
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IPS6 - DISCRETE WIRE COMPONENTS & TOOLING
(Samtec)
F214 (Rev 05FEB14)
TM
STRIP
40
CC10R–1012–L IPS6–04–01–L PET–04–01–L–VT
(6,35 mm) .250
IPS6, CC10, PET SERIES
DISCRETE WIRE COMPONENTS & TOOLIN.
IPS6-02-01-L - DISCRETE WIRE COMPONENTS & TOOLING
(Samtec)
F214 (Rev 05FEB14)
TM
STRIP
40
CC10R–1012–L IPS6–04–01–L PET–04–01–L–VT
(6,35 mm) .250
IPS6, CC10, PET SERIES
DISCRETE WIRE COMPONENTS & TOOLIN.
IPS6-04-01-L - DISCRETE WIRE COMPONENTS & TOOLING
(Samtec)
F214 (Rev 05FEB14)
TM
STRIP
40
CC10R–1012–L IPS6–04–01–L PET–04–01–L–VT
(6,35 mm) .250
IPS6, CC10, PET SERIES
DISCRETE WIRE COMPONENTS & TOOLIN.