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IQDH88N06LM5SC 60V MOSFET

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Description

Public IQDH88N06LM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 60 V .
1 Maxi.

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Features

* N‑channel, logic level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* Optimized design for double side cooling
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21 Product

Applications

* Table 1 Parameter VDS RDS(on),max ID Qoss QG Key Performance Parameters Value Unit 60 V 0.86 mΩ 447 A 133 nC 76 nC Type/Ordering Code IQDH88N06LM5SC Package PG‑WHSON‑8 PG‑WHSON‑8 5 67 8 tab 4 3 21 Drain Pin 5-8, tab Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3

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