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IRF7342PbF Power MOSFET

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Description

* Generation V Technology * Ultra Low On-Resistance * Dual P Channel MOSFET * Surface Mount * Available in Tape & Reel * Dynam.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Applications

* The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package

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