IRF7342D2 Datasheet - International Rectifier

IRF7342D2 MOSFET & Schottky Diode

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this.

IRF7342D2 Features

* ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D =t 1 / t 2 2. Peak T J = P DM x ZthJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to

IRF7342D2 Datasheet (163.53 KB)