IRF7341 Datasheet - International Rectifier

HEXFET Power MOSFET

IRF7341 General Description

l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 55V RDS(on) = 0.050Ω 3 6 4 5 Top V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and .

IRF7341 Datasheet (135.00 KB)

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IRF7341

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International Rectifier

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135.00 KB

Description:

Hexfet power mosfet.
PD -91703 IRF7341 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & .

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IRF7341 HEXFET Power MOSFET International Rectifier

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IRF7341 General Description

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