IRF7341QPbF Datasheet - International Rectifier

IRF7341QPbF, Power MOSFET

Benefits * Advanced Process Technology * ÿDual N-Channel MOSFET * ÿUltra Low On-Resistance * ÿ175°C Operating Temperat.
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Details

Part number:

IRF7341QPbF

Manufacturer:

International Rectifier

File Size:

209.69 KB

Description:

Power MOSFET

Applications

* The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. PD

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IRF7341QPbF Power MOSFET International Rectifier

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