* of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO
IRF7341GPBF Datasheet (209.46 KB)
IRF7341GPBF
International Rectifier
209.46 KB
Power mosfet.
IRF7341GPbF Advanced Process Technology ÿDual N-Channel MOSFET ÿUltra Low On-Resistance ÿ175°C Operating Temp.
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