* of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety o
IRF7342QPBF Datasheet (204.93 KB)
IRF7342QPBF
International Rectifier
204.93 KB
Power mosfet.
PD - 96109
IRF7342QPbF
O O O O O O O O
Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & R.
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