ISC027N10NM6 MOSFET

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Description

ISC027N10NM6 MOSFET OptiMOSTM 6 Power-Transistor, 100 V .

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Datasheet Specifications

Part number: ISC027N10NM6
Manufacturer: Infineon ↗
File Size: 1.55 MB
Datasheet: ISC027N10NM6-Infineon.pdf
Description: MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 100 V RDS(on),max 2.7 mΩ ID 192 A Qoss 107 nC QG (0V10V) 58 nC Qrr (100A/µs) 62 nC TDSON-8 FL (enlarged source interconnection) 8 7 65 1 2 3 4 4 3 2 1 5 67 8 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: I

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ISC027N10NM6 MOSFET Infineon

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