ISC027N10NM6

MOSFET

Infineon

ISC027N10NM6 Features

* N-channel, normal level

* Very low on-resistance RDS(on)

* Excellent gate charge x RDS(on) product (FOM)

* Very low reverse recovery charge (Qrr)

* High avalanche energy rating

* 175°C operating temperature

* Optimized for high frequency swit

ISC027N10NM6 General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

ISC027N10NM6 Datasheet (1.55 MB)