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ISC60NM60L

N-Channel MOSFET Transistor

ISC60NM60L Features

* Drain Current : ID= 60A@ TC=25℃

* Drain Source Voltage : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @VGS=10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, DC-

ISC60NM60L General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 180 A PD To.

ISC60NM60L Datasheet (330.87 KB)

Preview of ISC60NM60L PDF

Datasheet Details

Part number:

ISC60NM60L

Manufacturer:

Inchange Semiconductor

File Size:

330.87 KB

Description:

N-channel mosfet transistor.

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ISC60NM60L N-Channel MOSFET Transistor Inchange Semiconductor

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