Datasheet4U Logo Datasheet4U.com

ISCD3NK80Z

N-Channel MOSFET Transistor

ISCD3NK80Z Features

* Drain Current : ID= 2.5A@ TC=25℃

* Drain Source Voltage : VDSS= 800V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, DC-DC conve

ISCD3NK80Z General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.5 A IDM Drain Current-Single Pluse 10 A PD To.

ISCD3NK80Z Datasheet (428.35 KB)

Preview of ISCD3NK80Z PDF

Datasheet Details

Part number:

ISCD3NK80Z

Manufacturer:

Inchange Semiconductor

File Size:

428.35 KB

Description:

N-channel mosfet transistor.

📁 Related Datasheet

ISC-1008 Surface Mount Wirewound Shielded Inductor (Vishay Siliconix)

ISC-1210 Shielded Inductors (Vishay Siliconix)

ISC-1812 Shielded Inductors (Vishay Siliconix)

ISC009N06LM5 MOSFET (Infineon)

ISC011N03L5S MOSFET (Infineon)

ISC014N08NM6 MOSFET (Infineon)

ISC015N04NM5 MOSFET (Infineon)

ISC015N06NM5LF MOSFET (Infineon)

ISC015N06NM5LF2 MOSFET (Infineon)

ISC019N03L5S MOSFET (Infineon)

TAGS

ISCD3NK80Z N-Channel MOSFET Transistor Inchange Semiconductor

Image Gallery

ISCD3NK80Z Datasheet Preview Page 2 ISCD3NK80Z Datasheet Preview Page 3

ISCD3NK80Z Distributor