ISC031N08NM6SC Datasheet - Infineon

ISC031N08NM6SC, 80V MOSFET

Public ISC031N08NM6SC Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 80 V .
1 Maxi.

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Datasheet Details

Part number:

ISC031N08NM6SC

Manufacturer:

Infineon ↗

File Size:

1.07 MB

Description:

80V MOSFET

Features

* Dual‑side cooled package with lowest Junction‑top thermal resistance
* Optimized for high performance SMPS
* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb‑free lead plating

Applications

* Table 1 Key performance parameters Parameter Value Unit VDS 80 V RDS(on),max 3.1 mΩ ID 145 A Qoss 73 nC QG(0V10V) 37 nC Qrr (100A/μs) 34 nC PG‑WSON‑8 8 7 6 5 1 2 3 4 Drain Pin 5-8 Gate Pin 4 Source Pin 1-3, tab Part number ISC031N08NM6SC Package PG‑WSON‑8 Marking 031N0

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ISC031N08NM6SC 80V MOSFET Infineon

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