ISC110N12NM6 Datasheet - Infineon

ISC110N12NM6, MOSFET

ISC110N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .

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Datasheet Details

Part number:

ISC110N12NM6

Manufacturer:

Infineon ↗

File Size:

1.22 MB

Description:

MOSFET

Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit

Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 11 mΩ ID 62 A Qoss 37 nC QG (0V10V) 15.4 nC Qrr (1000A/µs) 112.5 nC SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type / O

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ISC110N12NM6 MOSFET Infineon

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