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K20N60 - Fast IGBT

K20N60 Description

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode * 75% lower Eoff compared to previous gene.

K20N60 Applications

* offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
* Very soft, fast recovery anti-parallel Emitter Controlled Diode
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1 for target applications

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Fast IGBT Infineon
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