SIGC32T120R3E - IGBT
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7641M, L7641T, L7641E Date 06.07.20
SIGC32T120R3E Features
* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:
* power modules Applications:
* drives Chip Type VCE IC SIGC32T120R3E 1200V 25A Die Size 6.5 x 4.87 mm2 C
