SIGC32T120R3E Datasheet - Infineon

SIGC32T120R3E IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7641M, L7641T, L7641E Date 06.07.20.

SIGC32T120R3E Features

* 1200V Trench + Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power modules Applications:

* drives Chip Type VCE IC SIGC32T120R3E 1200V 25A Die Size 6.5 x 4.87 mm2 C

SIGC32T120R3E-Infineon.pdf