SIGC32T120R3E IGBT

Infineon

SIGC32T120R3E Description

SIGC32T120R3E IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

SIGC32T120R3E Features

* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is used for:

SIGC32T120R3E Applications

* drives Chip Type VCE IC SIGC32T120R3E 1200V 25A Die Size 6.5 x 4.87 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside met

📥 Download Datasheet

SIGC32T120R3E Datasheet Preview — Preview of SIGC32T120R3E PDF

Datasheet Details

Part number: SIGC32T120R3E
Manufacturer: Infineon ↗
File Size: 166.89 KB
Datasheet: SIGC32T120R3E-Infineon.pdf
Description: IGBT

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IGBT Infineon

Infineon SIGC32T120R3E-like datasheet