SIGC32T120R3E Datasheet - Infineon

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SIGC32T120R3E Features

* 1200V Trench + Field Stop technology

* low turn-off losses

* short tail current

* positive temperature coefficient

* easy paralleling This chip is used for:

* power modules Applications:

* drives Chip Type VCE IC SIGC32T120R3E 1200V 25A Die Size 6.5 x 4.87 mm2 C

SIGC32T120R3E General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7641M, L7641T, L7641E Date 06.07.20.

SIGC32T120R3E Datasheet (166.89 KB)