SIGC32T120R3E - IGBT

Infineon

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Datasheet Details

Part number	SIGC32T120R3E
Manufacturer	Infineon
File Size	166.89 KB
Description	IGBT
Datasheet	SIGC32T120R3E-Infineon.pdf

SIGC32T120R3E Product details

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional basic types L7641M, L7641T, L7641E Date 06.07.2010 27.06.2014 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.Legal Disclaimer The information given in this document shall in no eve

Features

1200V Trench + Field Stop technology.
low turn-off losses.
short tail current.
positive temperature coefficient.
easy paralleling This chip is used for:.
power modules.

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Published: Feb 14, 2016 |