Datasheet Details
- Part number
- IPP410N30N
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 1.75 MB
- Datasheet
- IPP410N30N-InfineonTechnologies.pdf
- Description
- MOSFET
IPP410N30N Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 300 V IPP410N30N Data Sheet Rev.2.0 Final Power Manage.
Features.
N-channel, normal level.
Fast Diode with reduced Qrr.
Optimized for hard commutation ruggedness.
Very lo.
IPP410N30N Features
* N-channel, normal level
* Fast Diode with reduced Qrr
* Optimized for hard commutation ruggedness
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for tar
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