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SPD08P06P SIPMOS Power-Transistor

SPD08P06P Description

Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor .
and charts stated herein.

SPD08P06P Features

* Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W
* A Type SPD08P06P SPU08P06P Package P-TO252 Orderin

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SIPMOS Power-Transistor Infineon Technologies
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