MK1040VP

High Power RF LDMOS FET

Innogration

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain

* Source Voltage Gate

* Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating

MK1040VP

Innogration

468.41 KB

High power rf ldmos fet.

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MK1040VP High Power LDMOS FET Innogration

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