MK1160VP High Power RF LDMOS FET

Innogration

Description

MK1160VP LDMOS TRANSISTOR Document Number: MK1160VP Preliminary Datasheet V1.0 1000-1100MHz, 50V, 600W, RF Power LDMOS Transistor .
The MK1160VP is a 600-watt, internally matched LDMOS FETs, designed for civilian pulsed avionics amplifier applications with frequencies from 1000 MHz.

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MK1160VP Datasheet Preview — Preview of MK1160VP PDF

Datasheet Specifications

Part number: MK1160VP
Manufacturer: Innogration
File Size: 551.19 KB
Datasheet: MK1160VP-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* Avionics: Mode-S, TCAS,JTIDS,DME and TACAN
* Thermally Enhanced Industry Standard Package
* High Reliability Metallization Process
* Excellent thermal Stability and Excellent Ruggedness
* Co

Applications

* with frequencies from 1000 MHz to 1100 MHz. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. MK1160VP
* Typical Performance(On Innogration fixture with device soldered): VDD = 50 Volts, IDQ = 100 mA, Pulse CW, Pulse Width=10 us,

MK1160VP Distributors

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