IS41LV8200A Datasheet - Integrated Silicon Solution

IS41LV8200A, 2M x 8 (16-MBIT) DYNAMIC RAM

IS41LV8200A 2M x 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE .
The ISSI IS41LV8200A is 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory.

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IS41LV8200A_IntegratedSiliconSolution.pdf

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Datasheet Details

Part number:

IS41LV8200A

Manufacturer:

Integrated Silicon Solution

File Size:

159.05 KB

Description:

2M x 8 (16-MBIT) DYNAMIC RAM

Features

* Extended Data-Out (EDO) Page Mode access cycle
* TTL compatible inputs and outputs
* Refresh Interval:
* 2,048 cycles/32 ms
* Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
* Single power supply: 3.3V ± 10%
* Byte Write and Byte Rea

Applications

* The IS41LV8200A is packaged in 28-pin 300-mil SOJ with JEDEC standard pinouts. PRODUCT SERIES OVERVIEW Part No. IS41LV8200A Refresh 2K Voltage 3.3V ± 10% KEY TIMING PARAMETERS Parameter RAS Access Time (tRAC) CAS Access Time (tCAC) Column Address Access Time (tAA) EDO Page Mode Cycle Time (tPC) R

IS41LV8200A Distributors

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IS41LV8200A 16-MBIT DYNAMIC RAM Integrated Silicon Solution

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