IS61DDB21M18A 18Mb DDR-II (Burst 2) CIO SYNCHRONOUS SRAM

Integrated Silicon Solution

Description

IS61DDB21M18A IS61DDB251236A 1Mx18, 512Kx36 18Mb DDR-II (Burst 2) CIO SYNCHRONOUS SRAM OCTOBER 2014 .
The 18Mb IS61DDB251236A and IS61DDB21M18A are synchronous, high-performance CMOS static random access memory (SRAM) devices.

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Datasheet Specifications

Part number: IS61DDB21M18A
Manufacturer: Integrated Silicon Solution
File Size: 589.81 KB
Datasheet: IS61DDB21M18A-IntegratedSiliconSolution.pdf
Description: 18Mb DDR-II (Burst 2) CIO SYNCHRONOUS SRAM

Features

* 512Kx36 and 1Mx18 configuration available.
* On-chip delay-locked loop (DLL) for wide data valid window.
* Common I/O read and write ports.
* Synchronous pipeline read with self-timed late write operation.
* Double Data Rate (DDR) interface for read and write input ports.

Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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📁 Related Datasheet

IS61DDB22M36C IS61DDB24M18C IS61DDP2B21M36C IS61DDP2B21M36C1 IS61DDP2B21M36C2 IS61DDP2B22M18C

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IS61DDB21M18A 18Mb DDR-II Burst CIO SYNCHRONOUS SRAM Integrated Silicon Solution

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