IS61DDB22M18 DDR-II (Burst of 2) CIO Synchronous SRAMs

Integrated Silicon Solution

Description

36 Mb (1M x 36.& 2M x 18) ISSIDDR-II (Burst of 2) CIO Synchronous SRAMs ® .
The 36Mb IS61DDB21M36 and IS61DDB22M18 are synchronous, high-performance CMOS static random access memory (SRAM) devices.

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Datasheet Specifications

Part number: IS61DDB22M18
Manufacturer: Integrated Silicon Solution
File Size: 545.46 KB
Datasheet: IS61DDB22M18-IntegratedSiliconSolution.pdf
Description: DDR-II (Burst of 2) CIO Synchronous SRAMs

Features

* 1M x 36 or 2M x 18.
* On-chip delay-locked loop (DLL) for wide data valid window.
* Common data input/output bus.
* Synchronous pipeline read with self-timed late write operation.
* Double data rate (DDR-II) interface for read and write input ports.

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📁 Related Datasheet

IS61DDB22M36C IS61DDB24M18C IS61DDP2B21M36C IS61DDP2B21M36C1 IS61DDP2B21M36C2 IS61DDP2B22M18C

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IS61DDB22M18 DDR-II Burst CIO Synchronous SRAMs Integrated Silicon Solution

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