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IS61DDB22M18

DDR-II (Burst of 2) CIO Synchronous SRAMs

IS61DDB22M18 Features

* 1M x 36 or 2M x 18.

* On-chip delay-locked loop (DLL) for wide data valid window.

* Common data input/output bus.

* Synchronous pipeline read with self-timed late write operation.

* Double data rate (DDR-II) interface for read and write input ports.

IS61DDB22M18 General Description

The 36Mb IS61DDB21M36 and IS61DDB22M18 are synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have a common I/O bus. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the Timing Reference Diagra.

IS61DDB22M18 Datasheet (545.46 KB)

Preview of IS61DDB22M18 PDF

Datasheet Details

Part number:

IS61DDB22M18

Manufacturer:

Integrated Silicon Solution

File Size:

545.46 KB

Description:

Ddr-ii (burst of 2) cio synchronous srams.

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IS61DDB22M18 DDR-II Burst CIO Synchronous SRAMs Integrated Silicon Solution

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