FLLXT971A
Intel
1.53MB
3.3v dual speed fast ethernet phy transceicer. at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reser
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FLL100 - Capacitor
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FLL 100
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Specifications
Nominal Voltage Capacity(10Hr, 20℃) Length Wi.
FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET
(Fujitsu)
.
FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET
(Eudyna Devices)
FLL107ME
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: ηadd=47.
FLL120MK - L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FEATURES
• High Output Power: P1dB = 40.0dBm (Typ.) • High Gain: G1dB = 10.0dB (Typ.) • High PAE: ηadd = 40% (Typ.) • Proven Reliability
• Hermeticall.
FLL177ME - L-BAND MEDIUM & HIGH POWER GAAS FET
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FLL200 - The Relationship for Open Circuit Voltage and Residual Capacity
(FAAM)
FLL200
Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃)
Charging Characteristics(25℃) Specifications
Nominal Voltage .
FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL200IB-2 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL200IB-3 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
(Eudyna Devices)
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET FEATURES
• • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
FLL21E004ME - High Voltage - High Power GaAs FET
(Eudyna Devices)
FLL21E004ME
FEATURES
・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm(typ.) at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Fre.