TN28F001BX Datasheet, Memory, Intel

TN28F001BX Features

• Memory that simplify write and allow block erase These devices aid the sy

PDF File Details

Part number:

TN28F001BX

Manufacturer:

Intel

File Size:

412.58kb

Download:

📄 Datasheet

Description:

1-mbit (128k x 8) boot block flash memory.

TAGS

TN28F001BX

Intel

📁 Related Datasheet

TN28F010 - 1024K (128K x 8) CMOS FLASH MEMORY (Intel)
E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µ.

TN28F020 - 256K x 8 CMOS FLASH MEMORY (Intel)
E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase  2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µS .

TN28F512-120 - 512K(64Kx8)CMOS FLASH MEMORY (Intel Corporation)
.

TN28F512-120 - 512K(64Kx8)CMOS FLASH MEMORY (Intel Corporation)
.

TN28F512-120 - 512K(64Kx8)CMOS FLASH MEMORY (Intel Corporation)
.

TN2-12 - SLIM POLARIZED RELAY (Matsushita Electric Works(Nais))
SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina.

TN2-12 - SLIM POLARIZED RELAY (Matsushita Electric Works(Nais))
SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina.

TN2-12 - SLIM POLARIZED RELAY (Matsushita Electric Works(Nais))
SLIM POLARIZED RELAY TN-RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Sealed construction allows automatic cleaning • Self-clinching termina.

TN2-12V - SLIM POLARIZED RELAY (Panasonic)
SLIM POLARIZED RELAY TN RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Self-clinching terminal also available 14 .551 5.6 .220 9.8 .386 FE.

TN2-24V - SLIM POLARIZED RELAY (Panasonic)
SLIM POLARIZED RELAY TN RELAYS • Surge voltage withstand: 1500 V FCC Part 68 • Self-clinching terminal also available 14 .551 5.6 .220 9.8 .386 FE.