TN28F020 Datasheet - Intel

TN28F020 256K x 8 CMOS FLASH MEMORY

E 28F020 2048K (256K X 8) CMOS FLASH MEMORY n Flash Electrical Chip-Erase  2 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read  90 ns Maximum Access Time n CMOS Low Power Consumption  10 mA Typical Active Current  50 µA Typical Standby Current  0 Watts Data Retention Power n Integrated Program/Erase Stop Timer n Command Register Architecture for Micropr.

TN28F020 Features

*  ±10% VCC Tolerance  Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology  EPROM-Compatible Process Base  High-Volume Manufacturing Experience n JEDEC-Standard Pinouts  32-Pin Plastic Dip  32-Lead PLCC  32-Lead TSOP (See Packaging Spec., Order #231369) n Exten

TN28F020-Intel.pdf