TN28F010 Datasheet - Intel

TN28F010 1024K (128K x 8) CMOS FLASH MEMORY

E 28F010 1024K (128K X 8) CMOS FLASH MEMORY 8 n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase n Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n 100,000 Erase/Program Cycles n 12.0 V ±5% VPP n High-Performance Read  90 ns Maximum Access Time n CMOS Low Power Consumption  10 mA Typical Active Current  50 µA Typical Standby Current  0 Watts Data Retention Power n Integrated Program/Erase Stop Timer n Command Register Architecture for Micro.

TN28F010 Features

*  ±10% VCC Tolerance  Maximum Latch-Up Immunity through EPI Processing n ETOX™ Nonvolatile Flash Technology  EPROM-Compatible Process Base  High-Volume Manufacturing Experience n JEDEC-Standard Pinouts  32-Pin Plastic Dip  32-Lead PLCC  32-Lead TSOP (See Packaging Spec., Order #231369) n Exten

TN28F010-Intel.pdf