IXTH15N70 N-Channel Enhancement Mode

InterFET Corporation

Description

IXTH 15N70 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID (cont) RDS(on) = 700 V = 15 A = 0.45 Ω Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM T.

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Datasheet Specifications

Part number: IXTH15N70
Manufacturer: InterFET Corporation
File Size: 34.68 KB
Datasheet: IXTH15N70_InterFETCorporation.pdf
Description: N-Channel Enhancement Mode

Features

* q Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s q q q q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Symbol Test Conditions Characteristic Val

Applications

* q VDSS VGS(th) I GSS IDSS RDS(on) VGS = 0 V, ID = 250 µ A VDS = VGS, ID = 250 µ A VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V q q q Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages q VGS = 10 V, ID = 0.5

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IXTH15N70 N-Channel Enhancement Mode InterFET Corporation

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