IXTH15N70 Datasheet - InterFET Corporation

IXTH15N70 N-Channel Enhancement Mode

IXTH 15N70 VDSS MegaMOSTMFET N-Channel Enhancement Mode ID (cont) RDS(on) = 700 V = 15 A = 0.45 Ω Symbol VDSS VDGR V GS VGSM I D25 I DM PD TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25 °C TC = 25° C, pulse width limited by TJM TC = 25 °C Maximum Ratings 700 700 ±20 ±30 15 60 300 -55 +150 150 -55 +150 V V V V A A W °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Mounting torque 1.13/10 Nm.

IXTH15N70 Features

* q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s q q q q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure High commutating dv/dt rating Fast switching times Symbol Test Conditions Characteristic Val

IXTH15N70_InterFETCorporation.pdf