Datasheet Specifications
- Part number
- IXTH10N100
- Manufacturer
- IXYS Corporation
- File Size
- 135.23 KB
- Datasheet
- IXTH10N100_IXYSCorporation.pdf
- Description
- MOSFET
Description
www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem.Features
* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test ConditionsApplications
* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8IXTH10N100 Distributors
📁 Related Datasheet
📌 All Tags