IXTH10N100 Datasheet - IXYS Corporation

IXTH10N100, MOSFET

www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem.

datasheet Preview Page 1 from Datasheet4u.com

IXTH10N100_IXYSCorporation.pdf

IXTH10N100 Datasheet Preview — Preview of IXTH10N100 PDF

Datasheet Details

Part number:

IXTH10N100

Manufacturer:

IXYS Corporation

File Size:

135.23 KB

Description:

MOSFET

Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions

Applications

* l VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8
* VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l 10N1

IXTH10N100 Distributors

📁 Related Datasheet

IXTH10N100D2 IXTH102N15T IXTH102N20T IXTH10P50P IXTH10P60 IXTH110N10L2

📌 All Tags

IXTH10N100 MOSFET IXYS Corporation

IXYS Corporation IXTH10N100-like datasheet