Datasheet4U Logo Datasheet4U.com

IXTH10N100

MOSFET

IXTH10N100 Features

* l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Conditions

IXTH10N100 Datasheet (135.23 KB)

Preview of IXTH10N100 PDF

Datasheet Details

Part number:

IXTH10N100

Manufacturer:

IXYS Corporation

File Size:

135.23 KB

Description:

Mosfet.
www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancem.

📁 Related Datasheet

IXTH10N100D2 Depletion Mode MOSFET (IXYS)

IXTH102N15T Power MOSFET (IXYS)

IXTH102N15T N-Channel MOSFET (INCHANGE)

IXTH102N20T Power MOSFET (IXYS)

IXTH102N20T N-Channel MOSFET (INCHANGE)

IXTH10P50 P-Channel MOSFET (IXYS Corporation)

IXTH10P50P Power MOSFET (IXYS)

IXTH10P60 Power MOSFET (IXYS)

IXTH110N10L2 N-Channel MOSFET (INCHANGE)

IXTH110N10L2 Power MOSFET (IXYS)

TAGS

IXTH10N100 MOSFET IXYS Corporation

Image Gallery

IXTH10N100 Datasheet Preview Page 2 IXTH10N100 Datasheet Preview Page 3

IXTH10N100 Distributor