IXTH12N100L Datasheet - IXYS

IXTH12N100L Power MOSFET

LinearTM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTH12N100L VDSS = ID25 = ≤ RDS(on) 1000V 12A 1.3Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque Maximum Ratings 1000 V 1000 V ±30 V ±40.

IXTH12N100L Features

* International Standard Package

* Designed for Linear Operation

* Avalanche Rated

* Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Programmable Lo

IXTH12N100L-IXYS.pdf

IXTH12N100L Datasheet Preview — Preview of IXTH12N100L PDF

Datasheet Details

Part number:

IXTH12N100L

Manufacturer:

IXYS

File Size:

146.67 KB

Description:

Power mosfet.

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IXTH12N100L IXTH12N100L Power MOSFET IXYS

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