Advance Technical Information High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTT12N140 IXTH12N140 VDSS = ID25 = RDS(on) ≤ 1400V 12A 2Ω TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s M
Datasheet Details
Part number:
IXTH12N140, IXTT12N140
Manufacturer:
IXYS
File Size:
125.46 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTH12N140, IXTT12N140.
Please refer to the document for exact specifications by model.