IXTH12N140, IXTT12N140 Datasheet - IXYS

IXTH12N140 - Power MOSFET

Advance Technical Information High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTT12N140 IXTH12N140 VDSS = ID25 = RDS(on) ≤ 1400V 12A 2Ω TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s M

IXTH12N140 Features

* z International Standard Packages z Molding Epoxies Weet UL 94 V-0 Flammability Classification z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2011 IXY

IXTT12N140-IXYS.pdf