Description
High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM.
Features
* International Standard Packages
* Molding Epoxies Weet UL 94 V-0
Flammability Classification
* Fast Intrinsic Diode
* Low Package Inductance
Advantages
* Easy to Mount
* Space Savings
Applications
* High Voltage Power Supplies
* Capacitor Discharge
* Pulse Circuits
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DS100425C(6/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5
* ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f =