IXTH12N150, IXTT12N150 - High Voltage Power MOSFET

IXYS

IXTH12N150 Description

High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM.

IXTH12N150 Features

* International Standard Packages
* Molding Epoxies Weet UL 94 V-0 Flammability Classification
* Fast Intrinsic Diode
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings

IXTH12N150 Applications

* High Voltage Power Supplies
* Capacitor Discharge
* Pulse Circuits © 2015 IXYS CORPORATION, All Rights Reserved DS100425C(6/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f =

📥 Download Datasheet

IXTH12N150 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTH12N150, IXTT12N150. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: IXTH12N150, IXTT12N150
Manufacturer: IXYS
File Size: 181.29 KB
Datasheet: IXTT12N150-IXYS.pdf
Description: High Voltage Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTH12N150, IXTT12N150.
Please refer to the document for exact specifications by model.

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High Voltage Power MOSFET IXYS

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